Body-Source-Tied Transistor

ABSTRACT

A semiconductor-on-insulator (SOI) transistor includes a semiconductor layer situated over a buried oxide layer, the buried oxide layer being situated over a substrate. The SOI transistor is situated in the semiconductor layer and includes a transistor body, gate fingers, source regions, and drain regions. The transistor body has a first conductivity type. The source regions and the drain regions have a second conductivity type opposite to the first conductivity type. A heavily-doped body-implant region has the first conductivity type and overlaps at least one source region. A common silicided region electrically ties the heavily-doped body-implant region to the at least one source region. The common silicided region can include a source silicided region, and a body tie silicided region situated over the heavily-doped body-implant region. The source silicided region can be separated from a drain silicided region by the gate fingers.

BACKGROUND

Semiconductor-on-insulator (SOI) devices are commonly employed in radiofrequency (RF) circuits where high noise isolation and low signal lossare required. These SOI devices use a buried oxide (BOX) to isolate RFcircuit components, such as transistors and/or passive components, in atop semiconductor layer. In amplifier designs, such as low noiseamplifiers, SOI transistors are required to be highly linear in order tomeet more stringent standards.

In order to meet linearity requirements, in one approach, an SOItransistor employs a floating body. However, floating body transistorsexhibit detrimental body effects. In another approach, dedicatedtransistor body contacts are connected to the transistor body tocounteract body effects. However, the body contacts can increaseparasitic capacitance. Body contacted transistors also typically employgate structures, such as “T” shaped gate structures, overlying thetransistor body, which results in increased gate resistance and furtherincreased parasitic capacitance in the SOI transistor, which in turnresults in increased noise in the amplifier. Body contacted transistorsalso have increased footprints.

Thus, there is a need in the art for SOI transistors that have improvedlinearity without sacrificing performance parameters and manufacturingconveniences.

SUMMARY

The present disclosure is directed to a body-source-tiedsemiconductor-on-insulator (SOI) transistor, substantially as shown inand/or described in connection with at least one of the figures, and asset forth in the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a flowchart of an exemplary method for manufacturinga semiconductor-on-insulator (SOI) transistor according to oneimplementation of the present application.

FIG. 2 illustrates an SOI transistor structure processed in accordancewith action 102 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 3 illustrates an SOI transistor structure processed in accordancewith action 104 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 4 illustrates an SOI transistor structure processed in accordancewith action 106 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 5 illustrates an SOI transistor structure processed in accordancewith action 108 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 6 illustrates an SOI transistor structure processed in accordancewith action 110 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 7A illustrates an SOI transistor structure processed in accordancewith action 112 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 7B illustrates a top view of a portion of an SOI transistorstructure corresponding to the SOI transistor structure of FIG. 7Aaccording to one implementation of the present application.

FIG. 7C illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the 501 transistor structure ofFIG. 7B according to one implementation of the present application.

FIG. 7D illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 7B according to one implementation of the present application.

FIG. 8A illustrates an SOI transistor structure processed in accordancewith action 114 in the flowchart of FIG. 1 according to oneimplementation of the present application.

FIG. 8B illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 8A according to one implementation of the present application.

FIG. 9A illustrates an SOI transistor structure processed according toone implementation of the present application.

FIG. 9B illustrates a top view of a portion of an SOI transistorstructure corresponding to the SOI transistor structure of FIG. 9Aaccording to one implementation of the present application.

FIG. 9C illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 9B according to one implementation of the present application.

FIG. 9D illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 9B according to one implementation of the present application.

FIG. 10A illustrates a low-noise amplifier (LNA) according to oneimplementation of the present application.

FIG. 10B illustrates a portion of an LNA circuit corresponding to theLNA of FIG. 10A and employing an SOI transistor according to oneimplementation of the present application.

DETAILED DESCRIPTION

The following description contains specific information pertaining toimplementations in the present disclosure. The drawings in the presentapplication and their accompanying detailed description are directed tomerely exemplary implementations. Unless noted other rise, like orcorresponding elements among the figures may be indicated by like orcorresponding reference numerals. Moreover, the drawings andillustrations in the present application are generally not to scale, andare not intended to correspond to actual relative dimensions.

FIG. 1 illustrates a flowchart of an exemplary method for manufacturinga semiconductor-on-insulator (SOI) transistor according to oneimplementation of the present application. Structures shown in FIGS. 2through 9D illustrate the results of performing actions 102 through 114shown in the flowchart of FIG. 1 . For example, FIG. 2 shows an SOItransistor structure after performing action 102 in FIG. 1 , FIG. 3shows an SOI transistor structure after performing action 104 in FIG. 1, and so forth.

Actions 102 through 114 shown in the flowchart of FIG. 1 are sufficientto describe one implementation of the present inventive concepts. Otherimplementations of the present inventive concepts may utilize actionsdifferent from those shown in the flowchart of FIG. 1 . Certain detailsand features have been left out of the flowchart that are apparent to aperson of ordinary skill in the art. For example, an action may consistof one or more sub-actions or may involve specialized equipment ormaterials, as known in the art. Moreover, some actions, such as maskingand cleaning actions, are omitted so as not to distract from theillustrated actions.

FIG. 2 illustrates an SOI transistor structure processed in accordancewith action 102 in the flowchart of FIG. 1 according to oneimplementation of the present application. As shown in FIG. 2 , SOItransistor structure 202 is provided. SOI transistor structure 202includes semiconductor layer 224 over buried oxide (BOX) layer 222 oversubstrate 220.

Semiconductor layer 224, buried oxide (BOX) layer 222, and substrate 220can be provided together as a pre-fabricated SOI wafer. In variousimplementations, a bonded and etch back SOI (BESOT) process, aseparation by implantation of oxygen (SIMOX) process, or a “smart cut”process can be used for fabricating the SOI wafer as known in the art.

In various implementations substrate 220 can be silicon,high-resistivity silicon, germanium, or group III-V material. Forexample, substrate 220 can be monocrystalline bulk silicon. BOX layer222 is situated on substrate 220. BOX layer 222 can be silicon dioxideor another oxide. Semiconductor layer 224 is situated on BOX layer 222.Semiconductor layer 224 can include any semiconductor material. Forexample, semiconductor layer 224 can be epitaxial silicon. As describedbelow, one or more SOI transistors can be fabricated in semiconductorlayer 224.

FIG. 3 illustrates an SOI transistor structure processed in accordancewith action 104 in the flowchart of FIG. 1 according to oneimplementation of the present application. As shown in FIG. 3 , in SOItransistor structure 204, a transistor body 226 is formed insemiconductor layer 224. Transistor body 226 has a first conductivitytype. For example, transistor body 226 can be implanted with boron oranother appropriate P type dopant, such that transistor body 226 has Ptype conductivity.

FIG. 4 illustrates an SOI transistor structure processed in accordancewith action 106 in the flowchart of FIG. 1 according to oneimplementation of the present application. As shown in FIG. 4 , in SO1transistor structure 206, gate oxide 228 is formed over transistor body226 as well as over portions of semiconductor layer 224. Gate oxide 228can comprise, for example, silicon dioxide (SiO₂) or another dielectric.As also shown in FIG. 4 , polycrystalline silicon (polysilicon) layer230 is formed over gate oxide 228. Gate oxide 228 and polysilicon layer230 can be formed by any technique known in the art.

FIG. 5 illustrates a top view of an SOI transistor structure processedin accordance with action 108 in the flowchart of FIG. 1 according toone implementation of the present application. As shown in FIG. 5 , inSOI transistor structure 208, exemplary gate fingers 232 and 234 havingrespective stubs 236 and 238 are fanned from polysilicon layer 230(shown in FIG. 4 ). Gate contact areas (also referred to as “gatecontacts” for simplicity) 240 a, 240 b, 242 a, and 242 b are also formedfrom polysilicon layer 230 (shown in FIG. 4 ). Gate fingers 232 and 234and gate contacts 240 a, 240 b, 242 a, and 242 b can be formed bypatterning polysilicon layer 230 (shown in FIG. 4 ) using any techniqueknown in the art. Gate oxide 228 (shown in FIG. 4 ) may be concurrentlypatterned. Top views of transistor body 226 and semiconductor layer 224are also shown in FIG. 5 .

Gate fingers 232 and 234 are narrow elongated segments of polysilicon.Gate fingers 232 and 234can be used to induce a conductive channel intransistor body 226. Gate contacts 240 a, 240 b, 242 a, and 242 b aresegments of polysilicon at terminal portions of gate flingers 232 and234. Gate contacts 240 a, 240 b, 242 a, and 242 b are wider than gatefingers 232 and 234. Gate contacts 240 a, 240 b, 242 a, and 242 bfacilitate connecting electrical connectors, such as vias and routings,to gate fingers 232 and 234.

As shown in FIG. 5 , stubs 236 and 238 of gate fingers 232 and 234 aresegments of polysilicon wider than the remaining portions of gatefingers 232 and 234. In the present implementation, stubs 236 and 238are situated at terminal portions of gate fingers 232 and 234 near gatecontacts 240 a and 242 a. In the present implementation, stubs 236 and238 face towards one another as shown in FIG. 5 . In variousimplementations, stubs 236 and 238 can be situated near gate contacts240 b and 242 b instead of, or in addition to near gate contacts 240 aand 242 a. In the present implementation, stubs 236 and 238 are widerthan the remaining portions of gate fingers 232 and 234, but narrowerthan gate contacts 240 a, 240 b, 242 a, and 242 b. In variousimplementations, stubs 236 and 238 may have any other dimensionsrelative to gate contacts 240 a, 240 b, 242 a, and 242 b. In variousimplementations, gate fingers 232 and 234, gate contacts 240 a, 240 b,242 a, and 242 b, and stubs 236 and 238 can have various shapes ordimensions other than those shown in FIG. 5 .

FIG. 6 illustrates an SOI transistor structure processed in accordancewith action 110 in the flowchart of FIG. 1 according to oneimplementation of the present application. As shown in FIG. 6 , in SOItransistor structure 210, lightly-doped source regions 244 and lightlydoped drain regions 246 are formed in transistor body 226, spacerdielectrics 248 are formed on sides of gate fingers 232 and 234, andsource regions 250 and drain regions 252 are formed in transistor body226.

Source regions 250 and drain regions 252, as well as lightly-dopedsource regions 244 and lightly doped drain regions 246, have a secondconductivity type opposite to the first conductivity type. Continuingthe above example, where transistor body 226 has P type conductivity,source regions 250 and drain regions 252, as well as lightly-dopedsource regions 244 and lightly doped drain regions 246, can be implantedwith phosphorus or another appropriate N type dopant. As known the art,lightly-doped source regions 244 and lightly doped drain regions 246 canbe regions having lower dopant concentration than source regions 250 anddrain regions 252. Lightly-doped source regions 244 and lightly dopeddrain regions 246 can have a lower implantation energy, such that sourceregions 250 and drain regions 252 extend deeper into transistor body226. Source regions 250 and lightly-doped source regions 244 togetherfunction as a transistor source. Likewise, drain regions 252 and lightlydoped drain regions 246 together function as a transistor drain.

Spacer dielectrics 248 can comprise, for example, silicon nitride (SiN).Spacer dielectrics 248 can be formed, for example, by a conformal CVDdeposition followed by removal of select portions over d between gateflingers 232 and 234. As a result, spacer dielectrics 248 can besituated on sides of gate fingers 232 and 234, separating gate fingers232 and 234 from source regions 250 and drain regions 252. In thepresent implementation, spacer dielectrics 248 are formed afterlightly-doped source regions 244 and lightly doped drain regions 246,but before source regions 250 and drain regions 252. Thus, lightly-dopedsource regions 244 and lightly doped drain regions 246 are aligned withgate fingers 232 and 234, while source regions 250 and drain regions 252are aligned with spacer dielectrics 248.

FIG. 7A illustrates an SOI transistor structure processed in accordancewith action 112 in the flowchart of FIG. 1 according to oneimplementation of the present application. As shown FIG. 7A, in SOItransistor structure 212A, heavily-doped body implant regions 256 areformed overlapping source regions 250. Heavily-doped body implantregions 256 are situated partially outside source regions 250 and neargate contacts 240 a and 240 b. Mask openings 254 show regions whereopenings may be defined in an exemplary mask, such that an implant canform heavily-doped body-implant regions 256 in transistor body 226(shown in FIG. 6 ) and overlapping source regions 250.

Heavily-doped body-implant regions 256 have the first conductivity type.Continuing the above example, where transistor body 226 (shown in FIG. 6) has P type conductivity and source regions 250 and drain regions 252have N type conductivity, heavily-doped body-implant regions 256 can beimplanted with boron or another appropriate P type dopant. Heavily-dopedbody-implant regions 256 have a significantly higher dopantconcentration compared to transistor body 226. For example, iftransistor body 226 has a dopant concentration of approximately1.0*10¹⁷/cm³, heavily-doped body-implant regions 256 can have a dopantconcentration of approximately 1.0*10²⁰/cm³.

FIG. 7B illustrates a top view of a portion of an SOI transistorstructure corresponding to the SOI transistor structure of FIG. 7Aaccording to one implementation of the present application. As shown inFIG. 7B, heavily-doped body-implant regions 256 comprise body tieregions 258 and overlap regions 260. Body tie regions 258 representportions of heavily-doped body-implant regions 256 outside sourceregions 250. Overlap regions 260 represent portions of heavily-dopedbody-implant regions 256 overlapping source regions 250. The overlapdistance 290 of overlap region 260 can be tuned to optimize theperformance of SOI transistor structure 212B.

As described above, mask openings 254 show regions where openings may bedefined in n exemplary mask, such that an implant can form heavily-dopedbody-implant regions 256 in transistor body 226 (shown in FIG. 6 ) andoverlapping source regions 250. For example, mask region 254 can haveboundaries approximately aligned over midpoints of gate fingers 232 and234 (i.e., halfway along dimension D1), and overlapping source regions250 by snore than a minimum process rule, as shown in FIG. 7B. Thus, animplant can reliably form heavily-doped body-implant regions 256 acrosstransistor body 226 (shown in FIG. 6 ) between gate fingers 232 and 234and/or between spacer dielectrics 248, and overlapping source regions250, while providing some tolerance for misalignment, and avoidingoverlapping drain regions 252.

As further shown in FIG. 7B, heavily-doped body-implant regions 256 areformed overlying and/or adjacent to stubs 236 and 238 of gate fingers232 and 234. Stubs 236 and 238 face each other as described above. Stubs236 and 238 have tapered portions that gradually narrow from width D2 towidth D1. In the present implementation, stubs 236 and 238 taper fromthe greater width D2 to the smaller width D1 using a slanted portion ata taper angle of about forty five degree (45°). In variousimplementations, a taper angle greater than or less than forty fivedegree (45°) may be used. The wider portions of stubs 236 and 238 can beoverplotted beyond source regions 250. For example, as shown in FIG. 7B,width D2 of stubs 236 and 238 is maintained, i.e. is overplotted,relative to source regions 250 by overplot distance 292, before stubs236 and 238 begin to taper. The overplot distance 292 of stubs 236 and238 can be tuned to optimize the performance of SOI transistor structure212B. Spacer dielectrics 248, heavily-doped body-implant regions 256,and source regions 250 may roughly mirror the contours of gate contacts,240 a and 242 a, stubs 236 and 238, and gate fingers 232 and 234.

FIG. 7C illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 7B according to one implementation of the present application. FIG.7C represents a cross-section along line “C-C” in FIG. 7B. As shown inFIG. 7C, SOI transistor structure 212C includes transistor body 226,heavily-doped body-implant regions 256 comprising body tie regions 258and overlap regions 260, source regions 250, mask 255, and implant 262.In the present implementation, implant 262 is a highly concentrated Ptype implant. Mask 255 may be any implant mask known the art. Mask 255is bordered by mask openings 254 in FIGS. 7A and 7B. Mask opening 254leaves an outer portions of source regions 250 unmasked and thus exposedto implant 262. As such, implant 262 forms heavily-doped body-implantregions 256 comprising body tie regions 258 and overlap regions 260.Notably, heavily-doped body-implant regions 256 are heavily doped withthe same conductivity type as transistor body 226 and create goodelectrical connections to transistor body 226.

FIG. 7D illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 7B according to one implementation of the present application. FIG.7D represents a cross-section along line “D-D” in FIG. 7B. As shown FIG.7D, SOI transistor structure 212D includes transistor body 226, overlapregions 260, gate fingers 232 and 234, mask 255, and implant 262. Mask255 is bordered by mask openings 254 in FIGS. 7A and 7B. As describedabove, mask opening 254 can have boundaries approximately aligned overmidpoints of gate fingers 232 and 234. Notably, because overlap regions260 of heavily-doped body implant regions 256 (shown in FIG. 7C) areheavily doped with the same conductivity type as transistor body 226they create good electrical connections to transistor body 226.

FIG. 8A illustrates an SOI transistor structure processed in accordancewith action 114 in the flowchart of FIG. 1 according to oneimplementation of the present application. FIG. 8B illustrates across-sectional view of a portion of an SOI transistor structurecorresponding to the SOI transistor structure of FIG. 8A according toone implementation of the present application. As shown in FIGS. 8A and8B, in SOI transistor structures 214A and 214B, common silicided regions264 are fabricated to form a robust and a very low resistance electricalconnection, i.e. to electrically tie, heavily-doped body-implant regions256 to source regions 250. Common silicided regions 264 include body tiesilicided regions 266 and source silicided regions 268. Body tiesilicided regions 266 overlie both body tie regions 258 and overlapregions 260. Source silicided regions 268 overlie source regions 250.

In order to form common silicided regions 264 in FIGS. 8A and 8B, mask255 (shown in FIGS. 7C and 7D) can be removed, then a siliciding layercan be deposited over various SOI transistor structures 212C and 212D bysputtering. In various implementations, the siliciding layer may be,nickel (Ni), cobalt (Co), platinum (Pt), or an alloy thereof. Then athermal anneal can be performed to cause the siliciding layer to reactwith heavily-doped body-implant regions 256 and source regions 250,creating common silicided regions 264 a few hundred angstroms deep. Asshown particularly in FIG. 8B, the siliciding layer will also react withdrain regions 252 and gate fingers 232 and 234, creating drain silicidedregions 270 and gate silicided regions 272. Then unreacted portions ofthe siliciding layer can be removed, resulting in SOI transistorstructures 214A and 214B. It is noted that spacers 248 do not reactduring the silicidation process and are thus not silicided. As such,spacers 248 are utilized to separate and insulate various silicidedregions from unintentionally shorting to each other.

Common silicided regions 264 are highly conductive. As a result,heavily-doped body-implant regions 256 are electrically tied to sourceregions 250. Heavily-doped body-implant regions 256 also create goodelectrical connections for transistor body 226. Thus, source regions250, heavily-doped body-implant regions 256, and transistor body 226 canachieve the same electrical potential. Moreover, a dedicated contact isnot needed for transistor body 226.

As stated above, spacer dielectrics 248 will not react with a silicidinglayer. Because spacer dielectrics 248 are situated on sides of gatefingers 232 and 234, source silicided regions 268 of common silicidedregions 264 are separated from drain silicided regions 270 by spacerdielectrics 248 and gate fingers 232 and 234. Thus, gate fingers 232 and234 and drain silicided regions 270 will not be electrically shorted tosource regions 250, and by extension, will not be electrically shortedto heavily-doped body-implant regions 256 and transistor body 226.

In one implementation, each SOI transistor structures 214A and 214Brepresents an N type field effect transistor (NFET); source regions 250and drain regions 252 are N type, and heavily-doped body-implant regions256 and transistor body 226 are P type. In other implementations, each501 transistor structures 214A and 214B represents a P type field effecttransistor (PFET), and the conductivity types are reversed; sourceregions 250 and drain regions 252 are P type, and heavily-dopedbody-implant regions 256 and transistor body 226 are N type.

SOI transistor structures 214A and 214B represent a substantiallycompleted SOI transistor. However, SOI transistor structures 214A and214B can also include additional elements not shown in FIG. 8A and 8B.For example, a multi-layer stack of metallizations and interlayerdielectrics can be situated over SOI transistor structures 214A and 214Eto create connections to common silicided regions 264, drain silicidedregions 270, and gate silicided regions 272. SOI transistor structures214A and 214B can also include other semiconductor devices. For example,semiconductor layer 224 can include other active devices, such as FETs.As another example, passive devices, such as inductors and capacitors,can be integrated in semiconductor layer 224 or in an overlyingmulti-layer stack. As yet another example, SOI transistor structures214A and 214B can be part of an integrated low noise amplifier (LNA)chip.

FIG. 9A illustrates an SOI transistor structure processed according toone implementation of the present application. FIG. 9B illustrates a topview of a portion of an SOI transistor structure corresponding to theSOI transistor structure of FIG. 9A according to one implementation ofthe present application, 501 transistor structures 314A and 314B inFIGS. 9A and 9B represent an alternative implementation to SOItransistor structures 212A and 212B in FIGS. 7A and 7B. Except fordifferences noted below, gate fingers 332 and 334 including stubs 336and 338, gate contacts 340 a, 340 b, 342 a, and 342 b, spacerdielectrics 348, source regions 350, drain regions 352, mask openings354, and heavily-doped body-implant regions 356 in FIGS. 9A and 9Bgenerally correspond to gate fingers 232 and 234 including stubs 236 and238, gate contacts 240 a, 240 b, 242 a, and 242 b, spacer dielectrics248, source regions 250, drain regions 252, mask openings 254, andheavily-doped body-implant regions 256 in FIGS. 7A and 7B.

As shown in FIG. 9A, in SOI transistor structure 314A, heavily-dopedbody-implant regions 356 are formed overlapping source regions 350.Heavily-doped body-implant regions 356 are situated inside sourceregions 350 and near centers of gate fingers 332 and 334 Mask openings354 show regions where openings may be defined in an exemplary mask,such that an implant cats forte heavily-doped body-implant regions 356overlapping source regions 350. Heavily-doped body-implant regions 356may be formed in a similar manner as described above with reference toaction 112 in FIG. 1 and with reference to heavily-doped body-implantregions 256 in FIGS. 7A through 7D, albeit utilizing different maskopenings and dimensions.

As shown in FIG. 9B, and in contrast to FIG. 7B, heavily-dopedbody-implant regions 356 entirely overlap source regions 350 within maskopenings 354. Dimension D3 of heavily-doped body-implant regions 356 canbe tuned to optimize the performance of SOI transistor structure 314B.As further shown in FIG. 9B, heavily-doped body-implant regions 356 areformed adjacent to stubs 336 and 338 of gate fingers 332 and 334. In thepresent implementation, stubs 336 and 338 are situated at or nearcenters of gate fingers 332 and 334, away from gate contacts gatecontacts 340 a, 340 b, 342 a, and 342 b. Stubs 336 and 338 face eachother and face away from drain regions 352. Stubs 336 and 338 havetapered portions and are substantially trapezoidal in the presentexample. At the base of the trapezoid, stubs 336 and 338 have dimensionD4. At the tip of the trapezoid, stubs 336 and 338 have dimension D5. Inone implementation, dimension D4 may be approximately four hundrednanometers (700 nm), and dimension D5 may be approximately two hundrednanometers (200 nm). In the present implementation, stubs 336 and 338have a taper angle of about forty-five degrees (45°). In variousimplementations, stubs 336 and 338 may have other shapes, dimensions, ortaper angles.

FIG. 9C illustrates a cross-sectional view of a portion of an SOItransistor structure corresponding to the SOI transistor structure ofFIG. 9B according to one implementation of the present application. FIG.9C represents a cross-section along line “C-C” in FIG. 9B, afterformation of common silicided regions 364. FIG. 9D illustrates across-sectional view of a portion of an SOI transistor structurecorresponding to the SOI transistor structure of FIG. 9B according toone implementation of the present application. FIG. 9D represents across-section along line “D-D” in FIG. 9B, after formation of commonsilicided regions 364, drain silicided regions 370, and gate silicidedregions 372. As shown in FIGS. 9C and 9D, SOI transistor structures 314Cand 314D include transistor body 326, gate fingers 332 and 334, spacerdielectrics 348, source regions 350, drain regions 352, heavily-dopedbody-implant regions 356, common silicided regions 364, drain silicidedregions 370, and gate silicided regions 372.

Heavily-doped body-implant regions 356 are situated inside of andoverlap source regions 350. Common silicided regions 364 include bodytie silicided regions 366 and source silicided regions 368. Body tiesilicided regions 366 overlie heavily-doped body-implant regions 356.Source silicided regions 368 overlie source regions 350. Commonsilicided regions 364, drain silicided regions 370, and gate silicidedregions 372 may be formed in a similar manner as described above withreference to action 114 in FIG. 1 and with reference to common silicidedregions 264, drain silicided regions 270, and gate silicided regions 272in FIGS. 8A and 8B.

SOI transistor structures 314C and 314D electrically tie source regions350, heavily-doped body-implant regions 356, and transistor body 326without a dedicated contact. Gate fingers 332 and 334 and drainsilicided regions 370 will not be electrically shorted to source regions350, and by extension, will not be electrically shorted to heavily-dopedbody-implant regions 356 and transistor body 326. SOI transistorstructures 314C and 314D in FIGS. 9C and 9D offer different tradeoffsbetween parasitics, effective channel width, and output resistance,compared to SOI transistor structures 214A and 214B in FIGS. 8A and 8B.

FIG. 10A illustrates a low-noise amplifier (LNA) according to oneimplementation of the present application. LNA 418 a amplifieselectrical signals received at input 474 a and provides the amplifiedelectrical signals to output 476 a. FIG. 10B illustrates a portion of anLNA circuit corresponding to LNA 418 a of FIG. 10A and employing an SOItransistor according to one implementation of the present application.

As shown in FIG. 10B, LNA circuit 418 b includes input 474 b, SOItransistor 414 including gate 433, source 450, and drain 452, SOItransistor 416, including gate 435, source 451, and drain 453, sourceinductance 478, gate capacitance 480, drain inductance 482, supplyvoltage 484, load capacitance 486, and output 476 b. LNA circuit 418 b,input 474 b, and output 476 b in FIG. 10B generally correspond to LNA418 a, input 474 a, and output 476 a in FIG. 10A. SOI transistor 414generally corresponds to SOI transistor structures 214A and 214B inFIGS. 8A and 8B, or to SOI transistor structures 314C and 314D in FIGS.9C and 9D, and may have any implementations and advantages describedabove. As seen in FIG. 10B, transistor body 492 of SOI transistor 414 isshorted to its source 450.

Input 474 b is coupled to gate 435 of SOI transistor 416. Source 451 ofSOI transistor 416 is coupled to source inductance 478, which is coupledto ground. Drain 453 of SO1 transistor 416 is coupled to source 450 ofSOI transistor 416. Gate 433 of SOI transistor 414 is coupled to gatecapacitance 480, which may represent a biasing voltage for SOItransistor 414. Drain 452 of SOI transistor 414 is coupled to draininductance 482, which is coupled to supply voltage 484. Drain 452 of SOItransistor 416 is also coupled to output 476 and to load capacitance486, which is coupled to ground.

LNA circuit 418 b employs cascoded SOT transistors 414 and 416 toachieve amplification. SOI transistor 416 is preferably configured tooptimize gain and minimize noise, and may be any SOI transistor known inthe art. SOI transistor 414 is preferably configured to provide controlover body effect and the linearity of the amplification and can beimplemented as the inventive SOI transistor structures 214A and 214B inFIGS. 8A and 8B, or the inventive SOI transistor structures 3140 and314D in FIGS. 9C and 9D. These inventive transistor structures, i.e. SOItransistor structures 214A and 214B in FIGS. 8A and 8B, or SOItransistor structures 314C and 314D in FIGS. 9C and 9D, provide lowerparasitics, lower gate resistance, and reduced body effects compared toconventional transistors. SOI transistor structures according to thepresent application may provide approximately five decibel-milliwatts(+5 dBm) improvement to linearity. Accordingly, SOI transistorstructures according to the present application are particularly suitedfor use as SOI transistor 414 in LNA circuit 418 b. Although an exampleof LNA 418 a is described above, in one implementation, SOI transistorstructures according to the present application can be utilized in apower amplifier (PA), which may utilize a similar circuit to LNA circuit418 b, albeit having multiple stages.

From the above description it is manifest that various techniques can beused for implementing the concepts described in the present applicationwithout departing from the scope of those concepts. Moreover, while theconcepts have been described with specific reference to certainimplementations, a person of ordinary skill in the art would recognizethat changes can be made in form and detail without departing from thescope of those concepts. As such, the described implementations are tobe considered in all respects as illustrative and not restrictive. Itshould also be understood that the present application is not limited tothe particular implementations described above, but many rearrangements,modifications, and substitutions are possible without departing from thescope of the present disclosure.

1-20. (canceled)
 21. A transistor comprising: a semiconductor layersituated over a dielectric layer; said transistor situated in saidsemiconductor layer and including a transistor body, gate fingers,source regions, and drain regions; said transistor body having a firstconductivity type, said source regions and said drain regions having asecond conductivity type opposite to said first conductivity type; aheavily-doped body-implant region having said first conductivity typeoverlapping at least one of said source regions; a common silicidedregion electrically tying said heavily-doped body-implant region to saidat least one of said source regions, and wherein said heavily-dopedbody-implant region is situated partially outside said source regions;wherein at least one of said gate fingers comprises a stub.
 22. Thetransistor of claim 21, wherein said heavily-doped body-implant regionis situated partially outside said source regions.
 23. The transistor ofclaim 21, wherein said stub comprises a tapered portion.
 24. Thetransistor of claim 21, wherein said heavily-doped body-implant regionis situated inside said source regions.
 25. The transistor of claim 21,wherein said stub comprises two tapered portions and is substantiallytrapezoidal.
 26. The transistor of claim 21, wherein said transistor isutilized in a low noise amplifier (LNA).
 27. The transistor of claim 21,wherein said transistor is utilized in a power amplifier (PA).
 28. Atransistor comprising: a semiconductor layer situated over a dielectriclayer, said dielectric layer being situated over a substrate; saidtransistor situated in said semiconductor layer and including atransistor body, gate fingers, source regions, and drain regions; saidtransistor body having a first conductivity type, said source regionsand said drain regions having a second conductivity type opposite tosaid first conductivity type; a heavily-doped body-implant region havingsaid first conductivity type overlapping at least one of said sourceregions; a source silicided region and a drain silicided region beingseparated by said gate fingers; a body tie silicided region situatedover said heavily-doped body-implant region; a common silicided regioncomprising said source silicided region and said body tie silicidedregion; wherein at least one of said gate fingers comprises a stubadjacent to said heavily-doped body-implant region.
 29. The transistorof claim 28, wherein said heavily-doped body-implant region is situatedpartially outside said source regions.
 30. The transistor of claim 28,wherein said stub comprises a tapered portion.
 31. The transistor ofclaim 28, wherein said heavily-doped body-implant region is situatedinside said source regions.
 32. The transistor of claim 28, wherein saidstub comprises two tapered portions and is substantially trapezoidal.33. The transistor of claim 28, wherein said transistor is utilized in alow noise amplifier (LNA).
 34. The transistor of claim 28, wherein saidtransistor is utilized in a power amplifier (PA).
 35. A transistorcomprising: a semiconductor layer situated over a dielectric layer; saidtransistor situated in said semiconductor layer and including atransistor body, a gate finger, a source region, and a drain region;said transistor body having a first conductivity type, said sourceregion and said drain region having a second conductivity type oppositeto said first conductivity type; a body-implant region having said firstconductivity type; a silicided region electrically tying saidbody-implant region to said source region; wherein said body-implantregion is situated partially outside said source region; wherein saidgate finger comprises a stub.
 36. The transistor of claim 35, whereinsaid heavily-doped body-implant region is situated partially outsidesaid source region.
 37. The transistor of claim 35, wherein said stubcomprises a tapered portion.
 38. The transistor of claim 35, whereinsaid heavily-doped body-implant region is situated inside said sourceregion.
 39. The transistor of claim 35, wherein said stub comprises twotapered portions and is substantially trapezoidal.
 40. The transistor ofclaim 35, wherein said transistor is utilized in a low noise amplifier(LNA).